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What is G5N120BND?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "HGTG5N120BND".


G5N120BND Datasheet PDF - Fairchild Semiconductor

Part Number G5N120BND
Description HGTG5N120BND
Manufacturers Fairchild Semiconductor　
Logo Fairchild Semiconductor Logo　


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Data Sheet
HGTG5N120BND, HGTP5N120BND
May 2003
21A, 1200V, NPT Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diodes
The HGTG5N120BND and HGTP5N120BND are Non-
Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The IGBT used is the development type
TA49308. The Diode used is the development type TA49058
(Part number RHRD6120).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49306.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG5N120BND
HGTP5N120BND
TO-247
TO-220AB
5N120BND
5N120BND
NOTE: When ordering, use the entire part number. i.e.,
HGTG5N120BND.
Symbol
C
G
Features
• 21A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . 175ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.fairchildsemi.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC STYLE TO-247
COLLECTOR
(FLANGE)
E
C
G
JEDEC TO-220AB (ALTERNATE VERSION)
COLLECTOR
(FLANGE)
E
C
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,682,195
4,803,533
4,605,948
4,684,413
4,809,045
4,620,211
4,694,313
4,809,047
4,631,564
4,717,679
4,810,665
4,639,754
4,743,952
4,823,176
4,639,762
4,783,690
4,837,606
4,641,162
4,794,432
4,860,080
4,644,637
4,801,986
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
Free Datasheet http://www.Datasheet4U.com

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G5N120BND equivalent
HGTG5N120BND, HGTP5N120BND
Typical Performance Curves Unless Otherwise Specified (Continued)
40
RG = 25Ω, L = 5mH, VCE = 960V
35
30
TJ = 25oC, TJ = 150oC, VGE = 12V
25
20
TJ = 25oC, TJ = 150oC, VGE = 15V
15
2 3 4 5 6 7 8 9 10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
250
RG = 25Ω, L = 5mH, VCE = 960V
225
VGE = 12V, VGE = 15V, TJ = 150oC
200
175
150
125
VGE = 12V, VGE = 15V, TJ = 25oC
100
2
3456789
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
40
RG = 25Ω, L = 5mH, VCE = 960V
35
30 TJ = 25oC, TJ = 150oC, VGE = 12V
25
20
15
10
0
2
TJ = 25oC, TJ = 150oC, VGE = 15V
345678
9
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
10
250 RG = 25Ω, L = 5mH, VCE = 960V
200
TJ = 150oC, VGE = 12V OR 15V
150
100 TJ = 25oC, VGE = 12V OR 15V
50
23456789
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
10
80
DUTY CYCLE <0.5%, VCE = 20V
70 PULSE DURATION = 250µs
60
50
40 TC = 25oC
30
20
TC = 150oC
10
TC = -55oC
0
7 8 9 10 11 12 13 14
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
15
16
IG(REF) = 1mA, RL = 120Ω, TC = 25oC
14
VCE = 1200V
12
10
VCE = 800V
8 VCE = 400V
6
4
2
0
0 10 20 30 40 50
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
60
©2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
Free Datasheet http://www.Datasheet4U.com


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G5N120BND datasheet


1. 21A, 1200V, N-Ch, IGBT, Transistor

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