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PDF SI2302DS Data sheet ( Hoja de datos )
| Número de pieza | SI2302DS | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay | |
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Si2302DS
Vishay Siliconix
N-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.085 @ VGS = 4.5 V
20
0.115 @ VGS = 2.5 V
ID (A)
2.8
2.4
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2302DS (A2)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Currenta
Continuous Source Current (Diode Conduction)b
Power Dissipationb
Operating Junction and Storage Temperature Range
TA= 25_C
TA= 70_C
TA= 25_C
TA= 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20
"8
2.8
2.2
10
1.6
1.25
0.80
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambientb
Maximum Junction-to-Ambientc
Parameter
Symbol
RthJA
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70628
S-53600—Rev. D, 22-May-97
Limit
100
166
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1
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Disclaimer
Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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