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IRF7737L2TRPBF Schematic ( PDF Datasheet ) - International Rectifier

Teilenummer IRF7737L2TRPBF
Beschreibung Power MOSFET ( Transistor )
Hersteller International Rectifier
Logo International Rectifier Logo 




Gesamt 10 Seiten
IRF7737L2TRPBF Datasheet, Funktion
Advanced Process Technology
Optimized for Industrial Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
Repetitive Avalanche Capability for Robustness and
Reliability
Lead Free, RoHS Compliant and Halogen Free
PD - 96414
IRF7737L2TRPbF
IRF7737L2TR1PbF
DirectFET® Power MOSFET ‚
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
Qg
40V
1.5mΩ
1.9mΩ
156A
89nC
SSS
D G SSS D
Applicable DirectFET® Outline and Substrate Outline 
SB SC
M2
M4
L6 DirectFET® ISOMETRIC
L4 L6 L8
Description
The IRF7737L2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to
achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET® package
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package
allows dual sided cooling to maximize thermal transfer.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the IRF7737L2PbF to offer substantial system level savings and performance improvement
specifically in motor drive, high frequency DC-DC and other heavy load applications. This MOSFET utilizes the latest processing techniques to
achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current
applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (tested)
IAR
EAR
Drain-to-Source Voltage
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
gPulsed Drain Current
fPower Dissipation
ePower Dissipation
hSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
ÃgAvalanche Current
gRepetitive Avalanche Energy
40
± 20
156
110
31
315
624
83
3.3
104
386
See Fig.18a, 18b, 16, 17
V
A
W
mJ
A
mJ
TP Peak Soldering Temperature
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
270
-55 to + 175
°C
RθJA
RθJA
RθJA
RθJCan
RθJ-PCB
eJunction-to-Ambient
jJunction-to-Ambient
kJunction-to-Ambient
flJunction-to-Can
Parameter
Junction-to-PCB Mounted
fLinear Derating Factor
Typ.
–––
12.5
20
–––
–––
Max.
45
–––
–––
1.8
0.5
0.56
Units
°C/W
W/°C
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
10/27/11
Free Datasheet http://www.Datasheet4U.com






IRF7737L2TRPBF Datasheet, Funktion
IRF7737L2TR/TR1PbF
120
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
100 ID = 94A
80
60
40
20
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 17. Maximum Avalanche Energy Vs. Temperature
15V
VDS
L
DRIVER
RG
2V0VGS
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 18a. Unclamped Inductive Test Circuit
L
VCC
DUT
0
210K S
Fig 19a. Gate Charge Test Circuit
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+
- VDD
Fig 20a. Switching Time Test Circuit
6
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 16, 17).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 15)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
V(BR)DSS
tp
I AS
Fig 18b. Unclamped Inductive Waveforms
Id
Vgs
Vds
Vgs(th)
Qgodr
Qgd Qgs2 Qgs1
Fig 19b. Gate Charge Waveform
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 20b. Switching Time Waveforms
www.irf.com
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