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IRF6898MTRPBF Schematic ( PDF Datasheet ) - International Rectifier

Teilenummer IRF6898MTRPBF
Beschreibung Power MOSFET ( Transistor )
Hersteller International Rectifier
Logo International Rectifier Logo 




Gesamt 9 Seiten
IRF6898MTRPBF Datasheet, Funktion
IRF6898MPbF
IRF6898MTRPbF
HEXFET® Power MOSFET plus Schottky Diode ‚
l RoHs Compliant Containing No Lead and Bromide ‚
l Integrated Monolithic Schottky Diode
l Low Profile (<0.7 mm)
lDual Sided Cooling Compatible 
l Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
l 100% Rg tested
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±16V max 0.8mΩ@ 10V 1.2mΩ@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
41nC 15nC 4.7nC 66nC 43nC 1.6V
S
DG
D
S
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT
MX
MP
DirectFET™ ISOMETRIC
Description
The IRF6898MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6898MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters
that power high current loads such as the latest generation of microprocessors. The IRF6898MPbF has been optimized for parameters that
are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
25
±16
35
28
213
280
473
28
Units
V
A
mJ
A
3.0
ID = 35A
2.0
TJ = 125°C
1.0
TJ = 25°C
0.0
2 4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
1 www.irf.com © 2013 International Rectifier
14
12 ID= 28A
10
VDS= 20V
VDS= 13V
8
6
4
2
0
0 20 40 60 80 100 120
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 1.21mH, RG = 50Ω, IAS = 28A.
March 21, 2013
Free Datasheet http://www.Datasheet4U.com






IRF6898MTRPBF Datasheet, Funktion
IRF6898MTRPbF
L
VCC
DUT
0
210K S
Fig 15a. Gate Charge Test Circuit
Id
Vgs
Vds
Vgs(th)
Qgodr
Qgd Qgs2 Qgs1
Fig 15b. Gate Charge Waveform
15V
VDS
L
VRGSG
20V
tp
D.U.T
IAS
0.01Ω
DRIVER
+
-
VDD
A
Fig 16a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 16b. Unclamped Inductive Waveforms
VDS
VGS
RG
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
D.U.T.
+- VDD
Fig 17a. Switching Time Test Circuit
6 www.irf.com © 2013 International Rectifier
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 17b. Switching Time Waveforms
March 21, 2013
Free Datasheet http://www.Datasheet4U.com

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