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PDF IRF6674TRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF6674TRPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97133
IRF6674TRPbF
l RoHS Compliant
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
60V max
Qg tot
24nC
VGS
±20V max
Qgd
8.3nC
RDS(on)
9.0mΩ@ 10V
Vgs(th)
4.0V
MZ
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH SJ SP
MZ MN
Description
The IRF6674PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6674PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for 48V and 36V-60V input
voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency
and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-
DC converters.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAS
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃhAvalanche Current
Max.
60
±20
13.4
10.7
67
134
98
13.4
Units
V
A
mJ
A
50 14
ID = 13.4A
12 ID= 13.4A
VDS= 48V
40 VDS= 30V
10
30 8
20 TJ = 125°C
10
0
4
TJ = 25°C
6 8 10 12 14
VGS, Gate-to-Source Voltage (V)
16
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
6
4
2
0
0 10 20 30
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.272mH, RG = 25Ω, IAS = 13.4A.
1
4/24/08
Free Datasheet http://www.Datasheet4U.com
1 page  
1000
100
10 TJ = 150°C
TJ = 25°C
TJ = -40°C
1
VGS = 0V
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
IRF6674TRPbF
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
10
1msec
1
TC = 25°C
Tj = 150°C
Single Pulse
0.1
0.1 1
10msec
10 100
VDS , Drain-toSource Voltage (V)
Fig11. Maximum Safe Operating Area
14 5.0
12 4.5
10
4.0
8
6
3.5 ID = 250μA
ID = 100μA
3.0
4
2 2.5
0
25 50 75 100 125 150
TJ , Ambient Temperature (°C)
Fig 12. Maximum Drain Current vs. Ambient Temperature
400
300
2.0
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs.
Junction Temperature
ID
TOP 4.5A
9.3A
BOTTOM 26.8A
200
100
www.irf.com
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF6674TRPBF.PDF ] | |
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