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PDF IRF1404ZGPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF1404ZGPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 96236A
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
l Halogen-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
thisdesign area175°Cjunctionoperatingtemperature,
fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in a wide variety of applications.
G
IRF1404ZGPbF
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 3.7mΩ
S ID = 75A
TO-220AB
IRF1404ZGPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÃIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
iCase-to-Sink, Flat Greased Surface
iJunction-to-Ambient
www.irf.com
Max.
190
130
75
750
220
1.5
± 20
320
480
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
Max.
0.65
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
07/07/10
Free Datasheet http://www.Datasheet4U.com
1 page  
IRF1404ZGPbF
200
LIMITED BY PACKAGE
160
120
80
40
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current Vs.
Case Temperature
2.0
ID = 75A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
Vs. Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01 0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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| PDF Descargar | [ Datasheet IRF1404ZGPBF.PDF ] | |
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