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PDF 2SA1832 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1832 | |
| Descripción | Silicon PNP Epitaxial Type Transistor | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
TransistIoCrs
Silicon PNP Epitaxial Type Transistor
2SA1832
Features
High Voltage and High Curren :VCEO=-50V,IC=-150mA(Max.)
Excellent hFE Linearity :
hFE (IC=-0.1mA/ hFE(IC=-2mA)=0.95(Typ.)
High hFE: hFE=70 to 400
SOT-523
1.6+0.1
-0.1
1.0+0.1
-0.1
0.2+0.05
-0.05
21
Unit: mm
0.1+0.01
-0.01
3
0.5+0.1
-0.1
0.3+0.25
-0.05
1. Base
2. Emitter
3. Collecter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Jumction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
-50
-50
-5
-150
-30
100
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Collector-emitter saturation voltage
Collector Output Capacitance
Transition frequency
Symbol
Testconditons
IcBO VCB = -5V , IE = 0
IEBO VEB = -5V , IC = 0
hFE VCE = -6V , IC = -2mA
VCE(sat) IC = -100mA , IB = -10mA
Cob VCB=-10V,IE=0,f=1MHz
fT VCE=-10V,IC=-1mA
Min Typ Max Unit
-0.1 A
-0.1 A
70 400
-0.1 -0.3 V
4 7 pF
80 MHz
hFE Classification
Marking
Rank
hFE
SQ
Q
70 140
SY
Y
120 240
SG
GR
200 400
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