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YMP230N55 Schematic ( PDF Datasheet ) - YM

Teilenummer YMP230N55
Beschreibung N-Channel Enhancement Mode Power MOSFET
Hersteller YM
Logo YM Logo 




Gesamt 6 Seiten
YMP230N55 Datasheet, Funktion
YMP230N55
N-Channel
Enhancement Mode Power MOSFET
General Description
The YMP230N55 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and
general purpose applications.
Product Summary
BVDSS typ.
RDS(ON) typ.
max.
ID
55
2
3
230
V
m
m
A
Features
VDS=55VID=230A@ VGS =10V
RDS(ON)< 3 m@ VGS =10V
Special process technology for high ESD capability
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
100% UIS TESTED!
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
TO-220-3L top view
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
YMP230N55
YMP230N55
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Table 1. Absolute Maximum Ratings (TA=25)
Parameter
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V)
Drain Current (DC) at Tc=25
Drain Current (DC) at Tc=100
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation(Tc=25)
Derating factor
Single pulse avalanche energy (Note 2)
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS conditionTj=25,VDD=28V,VG=10V,L= 1mH ,R g=25;
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
PD
EAS
TJ,TSTG
Value
55
±25
230
170
900
300
1.33
2000
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
1/6
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YMP230N55 Datasheet, Funktion
Typical Characteristics (Cont.)
YMP230N55
Drain-Source On Resistance
Source-Drain Diode Forward
200
RON@T=25ºC:2.8m
Tj - Junction Temperature (°C)
Capacitance
VSD - Source-Drain Voltage (V)
Gate Charge
VDS - Drain-Source Voltage (V)
QG - Gate Charge (nC)
6/6
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