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FB17N50L Schematic ( PDF Datasheet ) - Vishay

Teilenummer FB17N50L
Beschreibung SIHFB17N50L
Hersteller Vishay
Logo Vishay Logo 




Gesamt 8 Seiten
FB17N50L Datasheet, Funktion
IRFB17N50L, SiHFB17N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
130
33
59
Single
0.28
D
TO-220
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Qg results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and
Avalanche Voltage and Current
• Low Trr and Soft Diode Recovery
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• ZVS and High Frequency Circuit
• PWM Inverters
TO-220
IRFB17N50LPbF
SiHFB17N50L-E3
IRFB17N50L
SiHFB17N50L
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 3.0 mH, RG = 25 Ω, IAS = 16 A (see fig. 12).
c. ISD 16 A, dI/dt 347 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91098
S-81263-Rev. A, 21-Jul-08
LIMIT
500
± 30
16
11
64
1.8
390
16
22
220
13
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
www.vishay.com
1
Free Datasheet http://www.Datasheet4U.com






FB17N50L Datasheet, Funktion
IRFB17N50L, SiHFB17N50L
Vishay Siliconix
800 ID
TOP
7A
10 A
640 BOTTOM 16 A
480
320
160
0
25 50 75 100 125 150
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
VGS
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 91098
S-81263-Rev. A, 21-Jul-08
Free Datasheet http://www.Datasheet4U.com

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