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Número de pieza | KF9N25P | |
Descripción | N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
Fabricantes | KEC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de KF9N25P (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! SEMICONDUCTOR
TECHNICAL DATA
KF9N25P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
KF9N25P
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converters
and switching mode power supplies.
FEATURES
VDSS= 250V, ID= 9.0A
Drain-Source ON Resistance : RDS(ON)=0.4
Qg(typ) = 14.5nC
@VGS = 10V
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL
KF9N25P
KF9N25F
UNIT
Drain-Source Voltage
VDSS
250
Gate-Source Voltage
VGSS
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
9.0 9.0*
5.65 5.65*
25 25*
180
4.0
4.5
Drain Power
Dissipation
Tc=25
Derate above 25
PD
83
0.67
38
0.3
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
1.5
Thermal Resistance, Junction-to-
Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
3.3
62.5
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
PIN CONNECTION
(KF9N25P, KF9N25F)
D
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
KF9N25F
AC
E
LM
D
NN
R
H
123
1. GATE
2. DRAIN
3. SOURCE
* Single Gauge Lead Frame
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
G
2010. 12. 3
S
Revision No : 0
1/7
Free Datasheet http://www.nDatasheet.com
1 page KF9N25P/F
Fig12. Transient Thermal Response Curve
(KF9N25P)
10-1
100 Duty=0.5
0.2
0.1
10-1
0.05
0.02
0.01
Single
Pulse
10-2
10-5
10-4
10-3 10-2
PDM
t1
t2
- Duty Factor, D= t1/t2
- RthJC =
Tj(max) - Tc
PD
10-1 100 101
TIME (sec)
Fig13. Transient Thermal Response Curve
(KF9N25F)
10-1
Duty=0.5
100 0.2
0.1
0.05
10-1
0.02
0.01
Single Pulse
10-2
10-5
10-4
10-3 10-2
PDM
t1
t2
- Duty Factor, D= t1/t2
- RthJC =
Tj(max) - Tc
PD
10-1 100 101
TIME (sec)
2010. 12. 3
Revision No : 0
5/7
Free Datasheet http://www.nDatasheet.com
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet KF9N25P.PDF ] |
Número de pieza | Descripción | Fabricantes |
KF9N25D | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
KF9N25F | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
KF9N25P | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
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