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2SD2105 Schematic ( PDF Datasheet ) - INCHANGE

Teilenummer 2SD2105
Beschreibung Silicon NPN Darlington Power Transistor
Hersteller INCHANGE
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Gesamt 2 Seiten
2SD2105 Datasheet, Funktion
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2105
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 5A
·High DC Current Gain
: hFE= 1000(Min) @ IC= 5A, VCE= 3V
APPLICATIONS
·Designed for low frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
ICM Collector Current-Peak
Collector Power Dissipation
@ TC=25
PC
Collector Power Dissipation
@ Ta=25
TJ Junction Temperature
Tstg Storage Temperature Range
120 V
120 V
7V
10 A
15 A
30
W
2
150
-55~150
isc websitewww.iscsemi.cn
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