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PDF W11NK90Z Data sheet ( Hoja de datos )
| Número de pieza | W11NK90Z | |
| Descripción | STW11NK90Z | |
| Fabricantes | STMicroelectronics | |
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STW11NK90Z
N-channel 900V - 0.82Ω - 9.2A - TO-247
Zener-protected SuperMESH™ Power MOSFET
General features
Type
STW11NK90Z
VDSS
900V
RDS(on)
<0.98Ω
ID Pw
9.2A 200W
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeability
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products
Applications
■ Switching application
TO-247
Internal schematic diagram
Order codes
Part number
STW11NK90Z
Marking
W11NK90Z
Package
TO-247
Packaging
Tube
July 2006
Rev 2
1/12
www.st.com
12
Free Datasheet http://www.nDatasheet.com
1 page  
STW11NK90Z
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=9.2A, VGS=0
ISD=9.2A,
di/dt = 100A/µs,
VDD=50V, Tj=25°C
(see Figure 18)
ISD=9.2A,
di/dt = 100A/µs,
VDD=50V, Tj=150°C
(see Figure 18)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
9.2 A
36.8 A
1.6 V
584 ns
6 µC
21 A
790 ns
8.7 µC
22 A
Table 8. Gate-source zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO(1)
Gate-source breakdown
voltage
Igs=±1mA (open drain) 30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
5/12
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5 Page 
STW11NK90Z
5 Revision history
Table 9. Revision history
Date
Revision
Changes
30-Mar-2006
1 First release
25-Jul-2006
2 Modified value on Avalanche data
Revision history
11/12
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