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Teilenummer | K9F1G08U0C |
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Beschreibung | FLASH MEMORY | |
Hersteller | Samsung | |
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Gesamt 36 Seiten K9F1G08B0C
K9F1G08U0C
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FLASH MEMORY
K9F1G08X0C
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
Samsung Confidential
1
Free Datasheet http://www.datasheetlist.com/
K9F1G08B0C
K9F1G08U0C
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FLASH MEMORY
Figure 1. K9F1G08X0C Functional Block Diagram
VCC
VSS
A12 - A27
X-Buffers
Latches
& Decoders
1,024M + 32M Bit
NAND Flash
ARRAY
A0 - A11
Y-Buffers
Latches
& Decoders
(2,048 + 64)Byte x 65,536
Data Register & S/A
Y-Gating
Command
Command
Register
I/O Buffers & Latches
CE Control Logic
RE & High Voltage
WE Generator
Global Buffers
Output
Driver
CLE ALE WP
VCC
VSS
I/0 0
I/0 7
Figure 2. K9F1G08X0C Array Organization
1 Block = 64 Pages
(128K + 4k) Byte
64K Pages
(=1,024 Blocks)
2K Bytes
64 Bytes
1 Page = (2K + 64)Bytes
1 Block = (2K + 64)B x 64 Pages
= (128K + 4K) Bytes
1 Device = (2K+64)B x 64Pages x 1,024 Blocks
= 1,056 Mbits
8 bit
Page Register
2K Bytes
I/O 0 ~ I/O 7
64 Bytes
I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6
1st Cycle
A0
A1
A2
A3
A4
A5
A6
2nd Cycle A8 A9 A10 A11 *L *L *L
3rd Cycle A12 A13 A14 A15 A16 A17 A18
4th Cycle A20 A21 A22 A23 A24 A25 A26
Note : Column Address : Starting Address of the Register.
* L must be set to "Low".
* The device ignores any additional input of address cycles than required.
I/O 7
A7
*L
A19
A27
Column Address
Column Address
Row Address
Row Address
Samsung Confidential
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6 Page K9F1G08B0C
K9F1G08U0C
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FLASH MEMORY
NAND Flash Technical Notes
Initial Invalid Block(s)
Initial invalid blocks are defined as blocks that contain one or more initial invalid bits whose reliability is not guaranteed by Samsung.
The information regarding the initial invalid block(s) is called the initial invalid block information. Devices with initial invalid block(s)
have the same quality level as devices with all valid blocks and have the same AC and DC characteristics. An initial invalid block(s)
does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a select tran-
sistor. The system design must be able to mask out the initial invalid block(s) via address mapping. The 1st block, which is placed on
00h block address, is guaranteed to be a valid block up to 1K program/erase cycles with 1bit/512Byte ECC.
Identifying Initial Invalid Block(s)
All device locations are erased(FFh) except locations where the initial invalid block(s) information is written prior to shipping. The ini-
tial invalid block(s) status is defined by the 1st byte in the spare area. Samsung makes sure that either the 1st or 2nd page of every
initial invalid block has non-FFh data at the column address of 2048. Since the initial invalid block information is also erasable in
most cases, it is impossible to recover the information once it has been erased. Therefore, the system must be able to recognize the
initial invalid block(s) based on the original initial invalid block information and create the initial invalid block table via the following
suggested flow chart(Figure 3). Any intentional erasure of the original initial invalid block information is prohibited.
Start
Set Block Address = 0
Increment Block Address
Create (or update)
Initial
Invalid Block(s) Table
No
No
* Check "FFh" at the column address 2048
of the 1st and 2nd page in the block
Check "FFh"
Yes
Last Block ?
Yes
End
Figure 3. Flow chart to create initial invalid block table
Samsung Confidential
12
Free Datasheet http://www.datasheetlist.com/
12 Page | ||
Seiten | Gesamt 36 Seiten | |
PDF Download | [ K9F1G08U0C Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
K9F1G08U0A | FLASH MEMORY | Samsung semiconductor |
K9F1G08U0A | 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory | Samsung semiconductor |
K9F1G08U0B | Flash Memory | Samsung Electronics |
K9F1G08U0C | FLASH MEMORY | Samsung |
K9F1G08U0D | 1Gb NAND Flash | Samsung |
Teilenummer | Beschreibung | Hersteller |
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KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |