Datenblatt-pdf.com


A1048 Schematic ( PDF Datasheet ) - Toshiba Semiconductor

Teilenummer A1048
Beschreibung PNP Transistor - 2SA1048
Hersteller Toshiba Semiconductor
Logo Toshiba Semiconductor Logo 




Gesamt 3 Seiten
A1048 Datasheet, Funktion
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1048
2SA1048
Audio Frequency Amplifier Applications
Unit: mm
Small package
High voltage: VCEO = 50 V (min)
High hFE: hFE = 70~400
Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SC2458
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 50 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 5 V
Collector current
IC
150
mA
Base current
IB
50 mA
JEDEC
Collector power dissipation
PC
200 mW
JEITA
Junction temperature
Storage temperature range
Tj 125 °C
Tstg
55~125
°C
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods” ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
ICBO
VCB = −50 V, IE = 0
IEBO
VEB = −5 V, IC = 0
hFE
(Note)
VCE = −6 V, IC = −2 mA
VCE (sat)
fT
Cob
NF
IC = −100 mA, IB = −10 mA
VCE = −10 V, IC = −1 mA
VCB = −10 V, IE = 0, f = 1 MHz
VCE = −6 V, IC = −0.1 mA, f = 1 kHz,
RG = 10 kΩ
Note: hFE classification O: 70~140, Y: 120~240, GR: 200~400
Min Typ. Max Unit
⎯ ⎯ −0.1 μA
⎯ ⎯ −0.1 μA
70 400
⎯ −0.1 0.3 V
80 ⎯ ⎯ MHz
4
7 pF
1.0 10 dB
1 2007-11-01





SeitenGesamt 3 Seiten
PDF Download[ A1048 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
A104Thick Film Network ResistorFenghua Advanced
Fenghua Advanced
A104Mono Axial Serise / Leaded Ceram IC Multilayer CapacitorsVishay Intertechnology
Vishay Intertechnology
A1041Silicon High Speed Power TransistorFujitsu
Fujitsu
A1042PNP Transistor - 2SA1042New Jersey Semiconductor
New Jersey Semiconductor
A1042Silicon High Speed Power TransistorFujitsu
Fujitsu

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche