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PDF APT65GP60B2 Data sheet ( Hoja de datos )
| Número de pieza | APT65GP60B2 | |
| Descripción | IGBT | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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APT65GP60B2
600V
POWER MOS 7® IGBT
T-MaxTM
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• 100 kHz operation @ 400V, 54A
• 50 kHz operation @ 400V, 76A
G
C
E
C
• Ultrafast Tail Current shutoff • SSOA rated
G
MAXIMUM RATINGS
Symbol Parameter
E
All Ratings: TC = 25°C unless otherwise specified.
APT65GP60B2
UNIT
VCES
VGE
VGEM
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current 7 @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 25°C
Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±20
±30
100
96
250
250A@600V
833
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVCES Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1000µA)
600
VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 2.5mA, Tj = 25°C)
3 4.5 6
VCE(ON)
I CES
Collector-Emitter On Voltage (VGE = 15V, IC = 65A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 65A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
2.2 2.7
2.1
1000
5000
IGES Gate-Emitter Leakage Current (VGE = ±20V)
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
µA
nA
Free Datasheet http://www.datasheet-pdf.com/
1 page  
TYPICAL PERFORMANCE CURVES
10,000
5,000
Cies
1,000
500
Coes
100
50
Cres
10
0 10 20 30 40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT65GP60B2
300
250
200
150
100
50
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
10-5
0.9
0.7
0.5
Note:
0.3 t1
0.1
0.05
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
Junction
Power
temp. ( ”C) (Watts)
0.0683086
0.0216664
0.0822491
0.2556989
Case temperature
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
187
100
50
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 400V
RG = 5 Ω
10
10 30
50
70 90 110 130
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
Fmax = min(fmax1, fmax 2 )
f max 1
=
t d (on )
+
0.05
t r + t d(off )
+
tf
fmax 2
=
Pdiss − Pcond
Eon2 + Eoff
Pdiss
=
TJ − TC
R θJC
Free Datasheet http://www.datasheet-pdf.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APT65GP60B2.PDF ] | |
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