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Teilenummer | 2SC2650 |
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Beschreibung | Silicon NPN Power Transistor | |
Hersteller | INCHANGE | |
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Gesamt 2 Seiten INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2650
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Switching regulator applicaition.
·High voltage switching application.
·High speed DC-DC converter application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
10 A
IBB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
5A
100 W
150 ℃
-55~150
℃
isc Website:www.iscsemi.cn
Free Datasheet http://www.datasheet-pdf.com/
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ 2SC2650 Schematic.PDF ] |
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