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FGA180N33ATD Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FGA180N33ATD
Beschreibung 330 V PDP Trench IGBT
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 9 Seiten
FGA180N33ATD Datasheet, Funktion
FGA180N33ATD
330 V PDP Trench IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.68 V @ IC = 180 A
• High Input Impedance
• RoHS Complaint
Applications
• PDP TV
October 2013
General Description
Using novel trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP TV appli-
cations where low conduction and switching losses are essen-
tial.
C
G DS
TO-3P
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
@ TC = 25oC
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive test, pulse width = 100usec, Duty = 0.1
* IC_pulse limited by max Tj
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
E
Ratings
330
± 30
180
450
390
156
-55 to +150
-55 to +150
300
Typ.
-
-
-
Max.
0.32
0.82
40
Unit
V
V
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
oC/W
©2011 Fairchild Semiconductor Corporation
FGA180N33ATD Rev. C1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet-pdf.com/






FGA180N33ATD Datasheet, Funktion
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
2000
1000
Common Emitter
VGE = 15V, RG = 15Ω
TC = 25oC
TC = 125oC
tr
td(on)
100
10 30
60 90 120 150
Collector Current, IC [A]
Figure 15. Turn off Switching
SOA Characteristics
500
180
100
10
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10
100
Collector-Emitter Voltage, VCE [V]
400
Figure 14. Turn-off Characteristics vs.
Collector Current
1000
100
tf
td(off)
10 Common Emitter
VGE = 15V, RG = 15Ω
TC = 25oC
TC = 125oC
1
10 30
60
90
120 150
Collector Current, IC [A]
Figure 16. Forward Characteristics
180
100
TJ = 25oC
10 TJ = 125oC
TC = 25oC
TC = 125oC
1
0.0 0.5 1.0 1.5 2.0 2.5
Forward Voltage, VF [V]
©2011 Fairchild Semiconductor Corporation
FGA180N33ATD Rev. C1
6
www.fairchildsemi.com
Free Datasheet http://www.datasheet-pdf.com/

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