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PDF IXTP56N15T Data sheet ( Hoja de datos )
| Número de pieza | IXTP56N15T | |
| Descripción | Power MOSFETs | |
| Fabricantes | IXYS | |
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TrenchTM
Power MOSFETs
IXTA56N15T
IXTP56N15T
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Tsold
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM,, VDD ≤ VDSS,TJ ≤ 175°C
TC = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-220)
TO-263
TO-220
Maximum Ratings
150
150
V
V
± 20 V
± 30 V
56 A
140 A
5A
500 mJ
3
300
-55 ... +175
175
-55 ... +175
V/ns
W
°C
°C
°C
300
260
1.13 / 10
2.5
3.0
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
Characteristic Values
Min. Typ. Max.
150 V
3.0 5.0 V
±100 nA
5 μA
200 μA
36 mΩ
VDSS =
ID25 =
RDS(on) ≤
150V
56A
36mΩ
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z International Standard Packages
z 175°C Operating Temperature
z High Current Handling Capability
z Avalanche Rated
z Fast Intrinsic Rectifier
z Dynamic dv/dt Rated
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
© 2012 IXYS CORPORATION, All Rights Reserved
DS99800A(05/12)
Free Datasheet http://www.datasheet-pdf.com/
1 page  
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
20
18 RG = 5Ω, VGS = 15V
VDS = 75V
16
14
I D = 56A
12
10 I D = 28A
8
6
25 35 45 55 65 75 85 95 105 115 125
T J - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
18
t r td(on) - - - -
16 TJ = 125ºC, VGS = 15V
VDS = 75V
14 I D = 28A, 56A
19
18
17
12 16
10 15
8 14
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
22
20 TJ = 125ºC
t f td(off) - - - -
RG = 5Ω, VGS = 15V
VDS = 75V
18
TJ = 25ºC
16
54
50
46
42
14 TJ = 125ºC
38
12 34
14 17 20 23 26 29 32 35 38 41 44 47 50 53 56
ID - Amperes
IXTA56N15T
IXTP56N15T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
20
18
16
14 RG = 5Ω, VGS = 15V
VDS = 75V
12
TJ = 25ºC
10
TJ = 125ºC
8
6
14 20 26 32 38 44 50
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
22
t f td(off) - - - -
20 RG = 5Ω, VGS = 15V
VDS = 75V
18 I D = 28A
56
54
50
46
16 42
14
I D = 56A
38
12 34
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
45
t f td(off) - - - -
40 TJ = 125ºC, VGS = 15V
35 VDS = 75V
30 I D = 28A, 56A
110
100
90
80
25 70
20 60
15 50
10 40
5 30
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
RG - Ohms
© 2012 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_56N15T(4G)5-11-12-A
Free Datasheet http://www.datasheet-pdf.com/
5 Page | ||
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| PDF Descargar | [ Datasheet IXTP56N15T.PDF ] | |
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