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Teilenummer | IXTA56N15T |
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Beschreibung | Power MOSFETs | |
Hersteller | IXYS | |
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Gesamt 5 Seiten TrenchTM
Power MOSFETs
IXTA56N15T
IXTP56N15T
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Tsold
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM,, VDD ≤ VDSS,TJ ≤ 175°C
TC = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-220)
TO-263
TO-220
Maximum Ratings
150
150
V
V
± 20 V
± 30 V
56 A
140 A
5A
500 mJ
3
300
-55 ... +175
175
-55 ... +175
V/ns
W
°C
°C
°C
300
260
1.13 / 10
2.5
3.0
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
Characteristic Values
Min. Typ. Max.
150 V
3.0 5.0 V
±100 nA
5 μA
200 μA
36 mΩ
VDSS =
ID25 =
RDS(on) ≤
150V
56A
36mΩ
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z International Standard Packages
z 175°C Operating Temperature
z High Current Handling Capability
z Avalanche Rated
z Fast Intrinsic Rectifier
z Dynamic dv/dt Rated
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
© 2012 IXYS CORPORATION, All Rights Reserved
DS99800A(05/12)
Free Datasheet http://www.datasheet-pdf.com/
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ IXTA56N15T Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
IXTA56N15T | Power MOSFETs | IXYS |
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