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PDF BYQ28E-200E Data sheet ( Hoja de datos )
| Número de pieza | BYQ28E-200E | |
| Descripción | Dual ultrafast power diodes | |
| Fabricantes | NXP Semiconductors | |
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BYQ28E-200E
Dual ultrafast power diodes
Rev. 4 — 14 July 2011
Product data sheet
1. Product profile
1.1 General description
Dual ultrafast power diodes in a SOT78 (TO-220AB) plastic package. These diodes are
rugged with a guaranteed electrostatic discharge voltage capability.
1.2 Features and benefits
Fast switching
Guaranteed ESD capability
High thermal cycling performance
Low on-state losses
Low thermal resistance
Soft recovery minimizes
power-consuming oscillations
1.3 Applications
Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
Table 1.
Symbol
VRRM
IO(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average output current
IFRM
repetitive peak forward
current
Static characteristics
VF forward voltage
Dynamic characteristics
trr reverse recovery time
Electrostatic discharge
VESD
electrostatic discharge
voltage
Conditions
square-wave pulse; δ = 0.5 ;
Tmb ≤ 119 °C; both diodes
conducting; see Figure 1;
see Figure 2
δ = 0.5 ; tp = 25 µs;
Tmb ≤ 119 °C; per diode;
square-wave pulse
IF = 5 A; Tj = 150 °C;
see Figure 4
IF = 1 A; VR = 30 V;
dIF/dt = 100 A/µs; Tj = 25 °C;
ramp recovery; see Figure 5
HBM; C = 250 pF; R = 1.5 kΩ;
all pins
Min Typ Max Unit
- - 200 V
- - 10 A
- - 10 A
- 0.8 0.89 V
5
- 15 25 ns
- - 8 kV
Free
Datasheet
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NXP Semiconductors
BYQ28E-200E
Dual ultrafast power diodes
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
VF forward voltage
IR reverse current
Dynamic characteristics
Qr recovered charge
trr reverse recovery time
IRM peak reverse recovery
current
VFR forward recovery voltage
Conditions
IF = 5 A; Tj = 25 °C; see Figure 4
IF = 5 A; Tj = 150 °C; see Figure 4
IF = 10 A; Tj = 25 °C; see Figure 4
VR = 200 V; Tj = 25 °C
VR = 200 V; Tj = 100 °C
IF = 2 A; VR ≥ 30 V; dIF/dt = 20 A/µs;
Tj = 25 °C; see Figure 5
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
ramp recovery; Tj = 25 °C; see Figure 5
IF = 0.5 A; IR = 1 A; step recovery;
Tj = 25 °C; see Figure 6
IF = 2 A; VR ≥ 30 V; dIF/dt = 20 A/µs;
Tj = 25 °C; see Figure 5
IF = 1 A; dIF/dt = 10 A/µs; Tj = 25 °C;
see Figure 7
Min Typ Max Unit
- 0.95 1.1 V
- 0.8 0.895 V
- 1.1 1.25 V
- 2 10 µA
- 0.1 0.2 mA
- 4 9 nC
- 15 25 ns
- 10 20 ns
- 0.4 0.7 A
- 1- V
15
IF
(A)
10
5
001aag978
(1) (2) (3)
0
0 0.5 1.0 1.5
VF (V)
IF
dlF
dt
trr
Qr
IR IRM
time
25 %
100 %
003aac562
Fig 4. Forward current as a function of forward
voltage
Fig 5. Reverse recovery definitions; ramp recovery
BYQ28E-200E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 14 July 2011
© NXP B.V. 2011. All rights reserved.
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11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .8
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . . .9
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .9
9.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
9.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .10
10 Contact information. . . . . . . . . . . . . . . . . . . . . .10
BYQ28E-200E
Dual ultrafast power diodes
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 14 July 2011
Document identifier: BYQ28E-200E
Free Datasheet http://www.datasheet-pdf.com/
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