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PDF W12NC60 Data sheet ( Hoja de datos )
| Número de pieza | W12NC60 | |
| Descripción | STW12NC60 | |
| Fabricantes | STMicroelectronics | |
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STW12NC60
N-CHANNEL 600V - 0.48Ω - 12A TO-247
PowerMesh™ II MOSFET
TYPE
VDSS
RDS(on)
ID
STW12NC60
600V
< 0.55Ω
12 A
s TYPICAL RDS(on) = 0.48Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™ II is the evolution of the first
generation of MESH OVERLAY™ . The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s HIGH CURRENT, HIGH SPEED SWITCHING
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
Value
Unit
600 V
600 V
±30 V
12 A
8A
18 A
190 W
1.52 W/°C
3 V/ns
–65 to 150
°C
150
(1)ISD ≤11A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
°C
June 2000
1/8
Free Datasheet http://www.datasheet4u.net/
1 page  
STW12NC60
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
Free Datasheet http://www.datasheet4u.net/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet W12NC60.PDF ] | |
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