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FGA60N60UFD Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FGA60N60UFD
Beschreibung 60A Field Stop IGBT
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 9 Seiten
FGA60N60UFD Datasheet, Funktion
FGA60N60UFD
600 V, 60 A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 60 A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC
November 2013
General Description
Using novel field stop IGBT technology, Fairchild’s field stop
IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switch-
ing losses are essential.
C
GCE
TO-3P
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive test , Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
E
Ratings
600
± 20
120
60
180
298
119
-55 to +150
-55 to +150
300
Typ.
-
-
-
Max.
0.33
1.1
40
Unit
V
V
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
oC/W
©2009 Fairchild Semiconductor Corporation
FGA60N60UFD Rev. C1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.net/






FGA60N60UFD Datasheet, Funktion
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Gate Resistance
300
100
tr
Figure 14. Turn-off Characteristics vs.
Gate Resistance
6000
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
td(off)
10
0
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
10 20 30 40
Gate Resistance, RG []
50
100
tf
10
0 10 20 30 40 50
Gate Resistance, RG []
Figure 15. Turn-on Characteristics vs
Collector Current
500
Common Emitter
VGE = 15V, RG = 5
TC = 25oC
TC = 125oC
tr
100
Figure 16. Turn-off Characteristics vs.
Collector Current
1000
Common Emitter
VGE = 15V, RG = 5
TC = 25oC
TC = 125oC
100
td(off)
td(on)
10
0 20 40 60 80 100 120
Collector Current, IC [A]
tf
30
0 20 40 60 80 100 120
Collector Current, IC [A]
Figure 17. Switching Loss vs. Gate Resistance
20
Common Emitter
VCC = 400V, VGE = 15V
10 IC = 60A
TC = 25oC
TC = 125oC
Eon
Figure 18. Switching Loss vs. Collector Current
20
Common Emitter
10 VGE = 15V, RG = 5
TC = 25oC
TC = 125oC
Eon
Eoff
1
1 Eoff
0 10 20 30 40 50
Gate Resistance, RG []
0.1
0
20 40 60 80 100
Collector Current, IC [A]
120
©2009 Fairchild Semiconductor Corporation
FGA60N60UFD Rev. C1
6
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.net/

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