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Teilenummer | B601 |
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Beschreibung | PNP Transistor - 2SB601 | |
Hersteller | NEC | |
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Gesamt 6 Seiten www.DataSheet4U.com
DATA SHEET
SILICON POWER TRANSISTOR
2SB601
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
FEATURES
• High-DC current gain due to Darlington connection
• Low collector saturation voltage
• Low collector cutoff current
• Ideal for use in direct drive from IC output for magnet drivers such
as treminal equipment or cash registers
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current
IC(DC)
Collector current
IC(pulse)*
Base current
IB(DC)
Total power dissipation
PT (Ta = 25°C)
Total power dissipation
PT (Tc = 25°C)
Junction temperature
Tj
Storage temperature
Tstg
* PW ≤ 10 ms, duty cycle ≤ 50%
Ratings
−100
−100
−7.0
+–5.0
+–8.0
−0.5
1.5
30
150
−55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
(/(&752'(
&211(&7,21
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16131EJ3V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928
Free Datasheet http://www.datasheet4u.net/
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2SB601
• The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
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M8E 00. 4
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6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ B601 Schematic.PDF ] |
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