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PDF SML010FBDH06 Data sheet ( Hoja de datos )

Número de pieza SML010FBDH06
Descripción SILICON CARBIDE POWER SCHOTTKY RECTIFIER DIODE BRIDGE
Fabricantes Seme LAB 
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No Preview Available ! SML010FBDH06 Hoja de datos, Descripción, Manual

SILICON CARBIDE POWER
SCHOTTKY RECTIFIER
DIODE BRIDGE
SML010FBDH06
600V, 10A Full Bridge Rectifier Configuration
High Temperature Operation Tj = 200°C
Effective Zero Reverse and Forward Recovery
High Speed Low Loss Switching
High Frequency Operation
High-Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (Per Die, Tc = 25°C unless otherwise stated)
VRRM
Repetitive Peak Reverse Breakdown Voltage
600V
VRSM
Surge Peak Reverse Voltage
600V
VDC DC Blocking Voltage
600V
IF(AVG) Average Forward Current
10A
IFSM
Non Repetitive Peak Forward Surge Current, tp = 10µs
45A
TJ Junction Temperature Range
-55 to +200°C
Tstg Storage Temperature Range
-55 to +225°C
THERMAL PROPERTIES (Per Die)
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Max.
2.0
Units
°C/W
ELECTRICAL CHARACTERISTICS (Per Die, Tc = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
Min.
VF (1)
IR
Forward Voltage
Reverse Current
IF = 10A
VR = VRRM
Tc = 175°C
Tc = 175°C
Typ.
1.8
2.0
10
Max.
2.2
2.7
100
1000
Units
V
µA
DYNAMIC CHARACTERISTICS
QC
Total Capacitative
Charge
Notes
(1) Pulse Width 300us, δ ≤ 2%
IF = 10A
di/dt = 500A/µs
VR = 600V
TJ = 25°C
32 nC
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected]
Document Number 8966
Website: http://www.semelab-tt.com
Issue 1
Page 1 of 1
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