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Teilenummer | AOWF10N60 |
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Beschreibung | 10A N-Channel MOSFET | |
Hersteller | Alpha & Omega Semiconductors | |
Logo | ||
Gesamt 6 Seiten AOW10N60/AOWF10N60
600V,10A N-Channel MOSFET
General Description
Product Summary
The AOW10N60 & AOWF10N60 have been fabricated
using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
Top View
TO-262
Bottom View
Top View
TO-262F
Bottom View
700V@150℃
10A
< 0.75Ω
D
G
G DS
G
SD
S
GD
G
SD
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOW10N60
AOWF10N60
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
10 10*
7.2 7.2*
36
4.4
290
580
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
250 28
2 0.22
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
AOW10N60
65
0.5
AOWF10N60
65
--
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
0.5
4.5
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev2: June 2010
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
AOW10N60/AOWF10N60
+
VDC
-
Vgs
Ig
Gate Charge Test Circuit & Waveform
Vgs
+
VDC Vds
DUT -
10V
Qgs
Qg
Qgd
Vds
Vgs
Rg
Vgs
Res istive Switching Test Circuit & Waveforms
RL
Vds
DUT
+
VDC Vdd
-
Vgs
t d(on) t r
t on
t d(off)
tf
t off
Charge
90%
10%
Vds
Id
Vgs
Rg
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L2
EAR= 1/2 LI AR
Vds
Vgs +
VDC Vdd
- Id
DUT
Vgs
BVDSS
IAR
Vds +
Vds -
Isd
Vgs
Ig
Diode RecoveryTes t Circuit & Waveforms
Qrr = - Idt
DUT
Vgs
L
Isd IF
trr
dI/dt
+
VDC Vdd
IRM
- Vds
Vdd
Rev2: June 2010
www.aosmd.com
Page 6 of 6
Free Datasheet http://www.datasheet4u.com/
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ AOWF10N60 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
AOWF10N60 | 10A N-Channel MOSFET | Alpha & Omega Semiconductors |
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