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AOW410 Schematic ( PDF Datasheet ) - Alpha & Omega Semiconductors

Teilenummer AOW410
Beschreibung 100V N-Channel MOSFET
Hersteller Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors Logo 




Gesamt 7 Seiten
AOW410 Datasheet, Funktion
AOW410
100V N-Channel MOSFET
SDMOS TM
General Description
The AOW410 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge & low Qrr.The result is outstanding efficiency with
controlled switching behavior. This universal technology is
well suited for PWM, load switching and general purpose
applications.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS= 7V)
100% UIS Tested
100% Rg Tested
100V
150A
< 6.5m
< 7.5m
Top View
TO-262
Bottom View
D
G DS
G
SD
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS,IAR
EAS,EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±25
150
108
405
12
10
50
125
333
167
1.9
1.2
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
12
54
0.35
Max
15
65
0.45
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev0: July 2010
www.aosmd.com
Page 1 of 7
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AOW410 Datasheet, Funktion
AOW410
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
320
280 di/dt=800A/µs
125ºC
40
35
240
Qrr
200
25ºC
30
25
160
125ºC
20
120 Irm
80
0
5
15
25ºC
10
10 15 20 25 30
IS (A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
280
240 Is=20A
200
125ºC
40
30
160
120 Qrr
80
40 Irm
25ºC
125ºC
25ºC
20
10
00
0 200 400 600 800 1000
di/dt (A/µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
40
35 di/dt=800A/µs
30 trr
25
20
S
15
25ºC
125ºC
25ºC
125ºC
5
4
3
2
1
0
10
0
-1
5 10 15 20 25 30
IS (A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
50 2
Is=20A
40 125ºC
1.5
30
25ºC
trr
1
20
25ºC
0.5
10 S
125º
00
0 200 400 600 800 1000
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Rev0: July 2010
www.aosmd.com
Page 6 of 7
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