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PDF AOW29S50 Data sheet ( Hoja de datos )

Número de pieza AOW29S50
Descripción Power Transistor
Fabricantes Alpha & Omega Semiconductors 
Logotipo Alpha & Omega Semiconductors Logotipo



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AOW29S50
500V 29A α MOS TM Power Transistor
General Description
Product Summary
The AOW29S50 has been fabricated using the advanced
αMOSTM high voltage process that is designed to deliver
high levels of performance and robustness in switching
applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability this part can be adopted
quickly into new and existing offline power supply designs.
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
Top View
TO-262
Bottom View
600V
120A
0.15
26.6nC
6.3µJ
D
G DS
G
SD
AOW29S50
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
ID
IDM
IAR
EAR
EAS
TC=25°C
Power Dissipation B Derate above 25oC
PD
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
Parameter
Symbol
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
RθJA
RθCS
Maximum Junction-to-Case
RθJC
G
AOW29S50
500
±30
29
18
120
6
70
608
357
2.9
100
20
-55 to 150
300
AOW29S50
65
0.5
0.35
S
Units
V
V
A
A
mJ
mJ
W
W/ oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev 0: April 2012
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/

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AOW29S50 pdf
AOW29S50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
700
600
500
400
300
200
100
0
25 50 75 100 125 150 175
TCASE (°C)
Figure 12: Avalanche energy
30
25
20
15
10
5
0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Current De-rating (Note B)
150
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=0.35°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.000001
Single Pulse
PD
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOW29S50 (Note F)
10
Rev 0: April 2012
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/

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