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PDF AOW2918 Data sheet ( Hoja de datos )
| Número de pieza | AOW2918 | |
| Descripción | 100V N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AOW2918
100V N-Channel MOSFET
General Description
The AOW2918 uses Trench MOSFET technology that
is uniquely optimized to provide the most efficient high
frequency switching performance. Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition, switching behavior is well
controlled with a soft recovery body diode.This device is
ideal for boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
100V
90A
< 7mΩ
TO-262
Top View
Bottom View
D
G DS
G
SD
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±20
90
70
260
13
10
35
61
267
133
2.1
1.33
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
12
50
0.45
Max
15
60
0.56
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : Aug 2011
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
AOW2918
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
TA=25°C
TA=100°C
300
250
200
TA=150°C
150
100
TA=125°C
10
1 10 100
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
50
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note F)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=60°C/W
10000
1000
100
10
TA=25°C
17
5
2
10
1
1E-05
0.001
0.1
10 0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.001
Single Pulse
PD
Ton
T
0.01 0.1 1 10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev0 : Aug 2011
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOW2918.PDF ] | |
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