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Número de pieza | AOW10N65 | |
Descripción | 10A N-Channel MOSFET | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AOW10N65 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! AOW10N65/AOWF10N65
650V,10A N-Channel MOSFET
General Description
Product Summary
The AOW10N65/AOWF10N65 is fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.By providing low RDS(on), Ciss
and Crss along with guaranteed avalanche capability this
device can be adopted quickly into new and existing offline
power supply designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
TO-262
Top View
Bottom View
TO-262F
Top View
Bottom View
750V@150℃
10A
< 1Ω
D
S
GD
AOW10N65
G
SD
DS
G
AOWF10N65
G
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOW10N65
AOWF10N65
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
10 10*
6.2 6.2*
36
3.4
173
347
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
250 28
2 0.22
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Symbol
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
RθJA
RθCS
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
AOW10N65
65
0.5
0.5
AOWF10N65
65
--
4.5
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev1: Nov 2011
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page AOW10N65/AOWF10N65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
1 RθJC=0.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Single Pulse
0.01
PD
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOW10N65 (Note F)
100
10
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
1 RθJC=4.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOWF10N65 (Note F)
100
Rev1: Nov 2011
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AOW10N65.PDF ] |
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