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PDF AON2410 Data sheet ( Hoja de datos )

Número de pieza AON2410
Descripción 30V N-Channel MOSFET
Fabricantes Alpha & Omega Semiconductors 
Logotipo Alpha & Omega Semiconductors Logotipo



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No Preview Available ! AON2410 Hoja de datos, Descripción, Manual

AON2410
30V N-Channel MOSFET
General Description
Product Summary
The AON2410 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
ID (at VGS=4.5V)
RDS(ON) (at VGS = 4.5V)
RDS(ON) (at VGS = 2.5V)
30V
8A
< 21m
< 28m
Top View
DFN 2x2B
Bottom View
D
D
S
D
S
Pin 1
D
D
G
Pin 1
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current G
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±12
8
6
32
2.8
1.8
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
t 10s
Steady-State
Symbol
RθJA
Typ
37
66
Max
45
80
D
S
Units
V
V
A
A
W
°C
Units
°C/W
°C/W
Rev 0 : Dec 2011
www.aosmd.com
Page 1 of 5
Free Datasheet http://www.datasheet4u.com/

1 page




AON2410 pdf
AON2410
+
VDC
-
Vgs
Ig
Gate Charge Test Circuit & Waveform
+
Vds
VDC
DUT -
Vgs
10V
Qgs
Qg
Qgd
Vds
Vgs
Rg
Resistive Switching Test Circuit & Waveforms
RL
Vds
DUT
+
Vdd
VDC
-
Charge
90%
10%
Vgs
Vgs
td(on) tr
ton
td(off)
tf
toff
Vds
Id
Vgs
Rg
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E=
AR
1/2
LIAR
Vds
Vgs
+
Vdd
VDC
- Id
DUT
Vgs
B VD S S
I AR
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vgs
+
Vdd
VDC
-
Isd
Vds
I F trr
dI/dt
I RM
Vdd
Rev 0 : Dec. 2011
www.aosmd.com
Page 5 of 5
Free Datasheet http://www.datasheet4u.com/

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