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PDF AO4454 Data sheet ( Hoja de datos )
| Número de pieza | AO4454 | |
| Descripción | 100V N-Channel MOSFET | |
| Fabricantes | Freescale | |
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AO4454
100V N-Channel MOSFET
General Description
The AO4454 is fabricated with SDMOS TM trench technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled switching behaviar. This universal technology is well
suited for PWM, load switching and general purpose applications.
Features
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 7V)
100V
6.5A
< 36mΩ
< 43mΩ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM
IAS, IAR
EAS, EAR
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±25
6.5
5.3
46
28
39
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
1/6
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Free Datasheet http://www.datasheet4u.com/
1 page  
AO4454
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
100
1000
150
di/dt=800A/µs
120
90
Qrr
60
Irm
30
125ºC
25ºC
125ºC
25ºC
30
25
20
15
10
5
00
0 5 10 15 20 25 30
IS (A)
Figure 13: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
150
Is=20A
120
125ºC
30
25
90
60 Qrr
30
Irm
25ºC
20
125ºC
25ºC
15
10
5
00
0 200 400 600 800 1000
di/dt (A/µs)
Figure 15: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
24
22
20
18
16
14
12
10
8
6
4
2
0
0
di/dt=800A/µs
trr
S
5
10
125ºC
25ºC
125ºC
25ºC
15 20 25
3
2.5
2
1.5
1
0.5
0
30
IS (A)
Figure 14: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
30 2.5
27 trr
24
21 40
125ºC
Is=20A
2
18 25ºC
15
1.5
12 1
9
6S
3
0
25ºC
125º
0.5
0
0 200 400 600 800 1000
di/dt (A/µs)
Figure 16: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
5/6
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Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AO4454.PDF ] | |
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