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PDF AO3414 Data sheet ( Hoja de datos )

Número de pieza AO3414
Descripción N-Channel Enhancement Mode Field Effect Transistor
Fabricantes Freescale 
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No Preview Available ! AO3414 Hoja de datos, Descripción, Manual

Freescale
N-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low rDS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOT-23 saves board space
Fast switching speed
High performance trench technology
AO3414/MC3414
/
PRODUCT SUMMARY
VDS (V)
rDS(on) ()
0.047 @ VGS = 4.5V
20 0.055@ VGS = 2.5V
0.087@ VGS = 1.8V
ID (A)
4.3
4.0
3.2
G
D
S
ABSOLUTE MAXIMUMRATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Ratings Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
20
V
±8
4.3
3.6 A
10
Continuous Source Current (Diode Conduction)a
Power Dissipationa
Operating Junction and Storage Temperature Range
IS
TA=25oC
TA=70oC
PD
1.6
1.3
0.9
TJ, Tstg -55 to 150
A
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t <= 5 sec
Steady-State
b. Pulse width limited by maximum junction temperature
1
Symbol
R T HJA
Maximum
100
166
Units
oC/W
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AO3414 pdf
Freescale
AO3414/MC3414
/
Package Information
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