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Teilenummer | KO3414 |
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Beschreibung | N-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | Kexin | |
Logo | ||
Gesamt 2 Seiten SMD Type
MOSFIECT
N-Channel Enhancement Mode
Field Effect Transistor
KO3414(AO3414)
Features
VDS (V) = 20V
ID = 4.2A (VGS=4.5V)
RDS(ON) 50m (VGS = 4.5V)
RDS(ON) 63m (VGS = 2.5V)
RDS(ON) 87m (VGS = 1.8V)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
11..BGasae te
22.ESmoituterrce
33..cDollreactionr
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS
8
Continuous Drain TA=25
Current *1
TA=70
4.2
ID
3.2
Pulsed Drain Current *2
IDM 15
Power Dissipation *1 TA=25
TA=70
1.4
PD
0.9
Themal Resistance.Junction-to-Ambient *1
RthJA
125
Themal Resistance.Junction-to-Case
RthJC
80
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
*1The value of R èJA is measured with the device mounted on 1in 2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25
Unit
V
V
A
W
/W
/W
www.kexin.com.cn 1
Free Datasheet http://www.datasheet4u.com/
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ KO3414 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
KO3414 | N-Channel Enhancement Mode Field Effect Transistor | Kexin |
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