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Teilenummer | AO3413 |
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Beschreibung | P-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | Freescale | |
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Gesamt 6 Seiten AO3413
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO3413 uses advanced trench technology toprovide excellent RDS(ON) , low gate charge and
operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
applications.
Features
VDS (V) = -20V
ID = -3 A
RDS(ON) < 97mΩ (VGS = -4.5V)
RDS(ON) < 130mΩ (VGS = -2.5V)
RDS(ON) < 190mΩ (VGS = -1.8V)
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-20
±8
-3
-2.4
-15
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
SOT-23 Carrier Tape
SOT-23 Tape and Reel Data
SOT-23 Reel
SOT-23 Tape
Leader / Trailer
& Orientation
6/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ AO3413 Schematic.PDF ] |
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