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PDF MURF2030GD Data sheet ( Hoja de datos )
| Número de pieza | MURF2030GD | |
| Descripción | (MURF2005 - MURF2060) 20.0 Ampere Isolated Glass Passivated Ultrafast Recovery Rectifier | |
| Fabricantes | Thinki Semiconductor | |
| Logotipo |  |
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MURF2005 thru MURF2060
®
MURF2005 thru MURF2060
Pb Free Plating Product
Pb
20.0 Ampere Isolated Glass Passivated Ultrafast Recovery Rectifier
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Environment|DC Motor Control
Plating Power Supply|UPS
Amplifier and Sound Device System etc..
Mechanical Data
Case: Molded plastic Isolated/Insulated ITO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity:As marked on diode body
Mounting position: Any
Weight: 2.03 grams
ITO-220AB
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Positive
Common Cathode
Suffix "CT"
Case
Negative
Common Anode
Suffix "CA"
Case
Doubler
Series Connection
Suffix "GD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Common Cathode Suffix "CT"
Common Anode Suffix "CA"
Anode and Cathode Coexistence Suffix "GD"
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
MURF2005CT MURF2010CT MURF2020CT MURF2030CT MURF2040CT MURF2060CT
SYMBOL UNITMURF2005CA MURF2010CA MURF2020CA MURF2030CA MURF2040CA MURF2060CA
MURF2005GD MURF2010GD MURF2020GD MURF2030GD MURF2040GD MURF2060GD
VRRM
50
100 200 300 400 600 V
VRMS
35
70 140 210 280 420 V
VDC 50 100 200 300 400 600 V
Maximum Average Forward Rectified
Current TC=125oC
IF(AV)
20.0 A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
200
175 A
Maximum Instantaneous Forward Voltage
@ 10.0 A
VF
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
Operating Junction and Storage
Temperature Range
CJ
TJ, TSTG
0.975
120
1.3
10.0
250
35
-55 to +150
70
1.5 V
uA
uA
nS
pF
oC
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
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