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PDF BYV26E Data sheet ( Hoja de datos )
| Número de pieza | BYV26E | |
| Descripción | (BYV26A - BYV26G) 1.0 AMP.ULTRA FAST RECOVERY RECTIFIERS | |
| Fabricantes | Thinki Semiconductor | |
| Logotipo |  |
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BYV26A thru BYV26G
®
BYV26A thru BYV26G
Pb Free Plating Product
1.0 AMP.ULTRA FAST RECOVERY RECTIFIERS
Pb
Features
D Glass passivated junction
D Hermetically sealed package
D Very low switching losses
D Low reverse current
D High reverse voltage
Applications
SOD-57
Unit: inch(mm)
Switched mode power supplies
High–frequency inverter circuits
94 9539
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Symbol BYV
26A
VRRM 200V
BYV
26B
400V
BYV BYV
26C 26D
600V 800V
BYV BYV Units
26E 26G
1000V 1400V V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375 (9.5mm) Lead Length
@TA = 55 oC
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Reverse Recovery Time (Note 1)
Maximum DC Reverse Current @ TA=25 oC
at Rated DC Blocking Voltage @ TA=150 oC
Maximum Instantaneous Forward Voltage
@ 1.0A @
@ 1.0A @
TTAA==2157o5CoC
Maximum Reverse recovery Current Slope
dIr/dt @ IF=1A, VR=30V, dIf/dt = 1A / uS
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
VDC
I(AV)
IFSM
Trr
IR
VF
dv/dt
Cj
RθJA
TJ
TSTG
300V 500V 700V 900V 1100V 1500V V
1.0 A
30
30 75
5.0
100
2.5
1.3
7
45
40
-55 to +175
-55 to +175
A
nS
uA
uA
V
A/uS
pF
oC /W
oC
oC
Notes:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Mount on Cu-Pad Size 5mm x 5mm on PCB.
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
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1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BYV26E.PDF ] | |
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