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PDF 2SD1119 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1119 | |
| Descripción | TRANSISTOR | |
| Fabricantes | Jin Yu Semiconductor | |
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2SD1119
TRANSISTOR (NPN)
FEATURES
z Low collector-emitter saturation voltage VCE(sat)
z Satisfactory operation performances at high efficiency with the low
voltage power supply.
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
40
25
7
3
500
150
-55-150
Units
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CBO IC =100μA, IE=0
V(BR)CEO IC =1mA, IB=0
V(BR)EBO IE=10μA, IC=0
ICBO
VCB=10V, IE=0
IEBO
VEB=6V, IC=0
hFE(1) VCE=2V, IC=500mA
hFE(2) VCE=2V, IC=2A
VCE(sat) IC=3A, IB=0.1A
fT VCE=6V, IC=50mA, f=200MHz
Cob VCB=20V, f=1MHz
MIN TYP MAX UNIT
40 V
25 V
7V
0.1 μA
0.1 μA
230 600
150
1V
150 MHz
50 pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
Q
230-380
TQ
R
340-600
TR
JinYu
semiconductor
www.htsemi.com
Free Datasheet http://www.datasheet4u.com/
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| PDF Descargar | [ Datasheet 2SD1119.PDF ] | |
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