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PDF 2SD1113 Data sheet ( Hoja de datos )

Número de pieza 2SD1113
Descripción Silicon NPN Triple Diffused
Fabricantes Renesas 
Logotipo Renesas Logotipo



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No Preview Available ! 2SD1113 Hoja de datos, Descripción, Manual

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Free Datasheet http://www.datasheet4u.com/

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2SD1113 pdf
Typical Output Characteristics
5
4
TC = 25°C
1.0
0.8
3 0.6
2 0.4
0.2 mA
1
IB = 0
0 12345
Collector to emitter voltage VCE (V)
2SD1113(K)
10,000
DC Current Transfer Ratio
vs. Collector Current
5,000
2,000
1,000
T
=
C
75°C
25
–25
500
VCE = 2 V
Pulse
200
100
0.1
0.2 0.5 1.0 2
5
Collector current IC (A)
10
Saturation Voltage vs. Collector Current
10
lC = 200 lB
5 TC = 25°C
Pulse
2 VBE (sat)
1.0
0.5 VCE (sat)
0.2
0.1
0.1
0.2 0.5 1.0 2
5
Collector current IC (A)
10
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