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PDF DSEE6-06CC Data sheet ( Hoja de datos )
| Número de pieza | DSEE6-06CC | |
| Descripción | Epitaxial Diode | |
| Fabricantes | IXYS | |
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ADVANCE TECHNICAL INFORMATION
DSEE 6-06CC
HiPerDynFREDTM Epitaxial Diode
ISOPLUS220TM
Electrically Isolated Back Surface
IFAV =
VRRM =
trr =
6A
600 V
20 ns
VRRMc
V
600
VRRM
V
300
Type
DSEE 6-06CC
ISOPLUS 220
E153432
123
Symbol
IFRMS
IFAVM
EAS
IAR
TVJ
TVJM
Tstg
Ptot
VISOL
FC
Weight
Conditions
TC = 150°C; rectangular, d = 0.5
TVJ = 25°C; non-repetitive
IAS = 0.8 A; L = 180 µH
VA = 1.5·VR typ.; f = 10 kHz; repetitive
TC = 25°C
50/60 Hz RMS; IISOL ≤ 1 mA
Mounting force
typical
Maximum Ratings
20 A
6A
0.1 mJ
0.1 A
-40...+175
175
-40...+150
°C
°C
°C
50 W
2500
V~
11...65 / 2.4...11 N / lb
2g
Symbol
IR c
VF e
RthJC
RthCH
trr
IRM
Conditions
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
IF = 10 A;
TVJ = 125°C
TVJ = 25°C
IF = 1 A; -di/dt = 50 A/µs;
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 10 A; -diF/dt = 100 A/µs
TVJ = 100°C
Characteristic Values
typ. max.
25 µA
0.2 mA
1.35 V
1.8 V
3.0 K/W
0.6 K/W
20 ns
2A
Notes: Data given for TVJ = 25OC and per diode unless otherwise specified
c Diodes connected in series
d Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
e Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 %
Isolated back surface*
Features
λ Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
λ Low cathode to tab capacitance (<15pF)
λ Planar passivated chips
λ Very short recovery time
λ Extremely low switching losses
λ Low IRM-values
λ Soft recovery behaviour
λ Epoxy meets UL 94V-0
Applications
λ Antiparallel diode for high frequency
switching devices
λ Antisaturation diode
λ Snubber diode
λ Free wheeling diode in converters
and motor control circuits
λ Rectifiers in switch mode power
supplies (SMPS)
λ Inductive heating
λ Uninterruptible power supplies (UPS)
λ Ultrasonic cleaners and welders
Advantages
λ Avalanche voltage rated for reliable
operation
λ Soft reverse recovery for low EMI/RFI
λ Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
DS98915B(07/03)
Free Datasheet http://www.datasheet4u.com/
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