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1ED020I12-F Schematic ( PDF Datasheet ) - Infineon

Teilenummer 1ED020I12-F
Beschreibung Single IGBT Driver IC
Hersteller Infineon
Logo Infineon Logo 




Gesamt 22 Seiten
1ED020I12-F Datasheet, Funktion
Datasheet, Version 2.2, December 2009
EICEDRIVERTM
1ED020I12-F
Single IGBT Driver IC
Power Management & Drives
Never stop thinking.
Free Datasheet http://www.datasheet4u.com/






1ED020I12-F Datasheet, Funktion
EICEDRIVERTM
1ED020I12-F
2 Functional Description
2.1 Introduction
The 1ED020I12-F is an advanced IGBT gate driver that can
be also used for driving power MOS devices. Control and
protection functions are included to make possible the design
of high reliability systems.
The device consists of two galvanic separated parts. The
input chip can be directly connected to a standard 5V DSP or
microcontroller with CMOS in/output and the output chip is
connected to the high voltage side.
An effective active Miller clamp function avoids the need of
negative gate driving in most applications and allows the use
of a simple bootstrap supply for the high side driver.
A rail-to-rail driver output enables the user to provide easy
clamping of the IGBTs gate voltage during short circuit of
the IGBT. So an increase of short circuit current due to the
feedback via the Miller capacitance can be avoided. Further,
a rail-to-rail output reduces power dissipation.
The device also includes an IGBT desaturation protection
with a FAULT status output.
A READY status output reports if the device is supplied and
operates correctly.
2.2.2
READY status output
The READY output shows the status of three internal
protection features.
• UVLO of the input chip
• UVLO of the output chip after a short delay
• Internal signal transmission
It is not necessary to reset the READY signal since its state
only depends on the status of the former protection signals.
2.2.3
Watchdog Timer
The 1ED020I12-F incorporates two level of signal
transmission security implemented through two independent
watchdog timers. First level ensures the short term signal
integrity by resending the (turn on/off) signals with a
watchdog period of typical 500ns. The second level monitors
during normal operation the internal signal transmission. If
the transmission fails for a given time, the IGBT is switched
off and the READY output reports an internal error.
2.2.4
Active Shut-Down
The Active Shut-Down feature ensures a safe IGBT off-state
if the output chip is not connected to the power supply.
2.2 Internal Protection Features
2.2.1
Undervoltage Lockout (UVLO)
To ensure correct switching of IGBTs the device is equipped
with an undervoltage lockout for both chips.
If the power supply voltage VVCC1 of the input chip drops
below VUVLOL1 a turn-off signal is sent to the output chip
before power-down. The IGBT is switched off and the
signals at IN+ and IN- are ignored as long as VVCC1 reaches
the power-up voltage VUVLOH1 .
If the power supply voltage VVCC2 of the output chip goes
down below VUVLOL2 the IGBT is switched off and signals
from the input chip are ignored as long as VVCC2 reaches the
power-up voltage VUVLOH2 .
2.3 Non-Inverting and Inverting Inputs
There are two possible input modes to control the IGBT. At
non-inverting mode IN+ controls the driver output while IN-
is set to low. At inverting mode IN- controls the driver output
while IN+ is set to high. A minimum input pulse width is
defined to filter occasional glitches.
2.4 Driver Output
The output driver section uses only MOSFETs to provide a
rail-to-rail output. This feature permits that tight control of
gate voltage during on-state and short circuit can be
maintained as long as the drivers supply is stable. Due to the
low internal voltage drop, switching behaviour of the IGBT
is predominantly governed by the gate resistor. Furthermore,
it reduces the power to be dissipated by the driver.
Datasheet
6 Version 2.2, 2009-12-03
Free Datasheet http://www.datasheet4u.com/

6 Page









1ED020I12-F pdf, datenblatt
EICEDRIVERTM
1ED020I12-F
Electrical Parameters
4.4 Electrical Characteristics
Note: The electrical characteristics involve the spread of values for the supply voltages, load and junction temperatures given
below. Typical values represent the median values, which are related to production processes at T = 25°C. Unless
otherwise noted all voltages are given with respect to GND.
4.4.1
Voltage Supply.
Parameter
UVLO Threshold Input Chip
UVLO Hysteresis Input Chip
(VUVLOH1 - VUVLOL1)
UVLO Threshold Output Chip
UVLO Hysteresis Output Chip
(VUVLOH1 - VUVLOL1)
Quiescent Current Input Chip
Quiescent Current Output Chip
Symbol
VUVLOH1
VUVLOL1
VHYS1
min.
3.5
0.15
Limit Values
typ. max.
4.1 4.3
3.8 —
——
VUVLOH2
VUVLOL2
VHYS2
10.4
0.7
12.0
11.0
0.9
12.6
IQ1
—7
9
IQ2
—4
6
Unit Test Conditions
V
V
V
V
V
V
mA VVCC1 =5V
IN+ = High, IN- = Low
=>OUT = High, RDY =
High, /FLT = High
mA VVCC2 =15V
VVEE2 =-8V
IN+ = High, IN- = Low
=>OUT = High, RDY =
High, /FLT = High
4.4.2
Logic Input and Output
Parameter
IN+,IN-, RST Low Input Voltage
IN+,IN-, RST High Input Voltage
IN-, RST Input Current
Symbol
min.
VIN+L,VIN-
L,VRSTL
VIN+H,VIN-
HVRSTH
IIN-,IRST
3.5
Limit Values
typ. max.
— 1.5
——
100 400
IN+ Input Current
RDY,FLT Pull Up Current
Input Pulse Suppression IN+, IN-
Input Pulse Suppression RST
for ENABLE/SHUTDOWN
Pulse Width RST
for Reseting FLT
FLT Low Voltage
RDY Low Voltage
IIN+,
IPRDY,
IPFLT
TMININ+,
TMININ-
TMINRST
30
30
100 400
100 400
40 —
40 —
TRST
800 —
VFLTL
VRDYL
— — 300
— — 300
Unit Test Conditions
V
V
uA VIN-=GND1
VRST =GND1
uA VIN+=VCC1
uA VRDY=GND1
VFLT=GND1
ns
ns
ns
mV ISINK(FLT) = 5mA
mV ISINK(RDY) = 5mA
Datasheet
12 Version 2.2, 2009-12-03
Free Datasheet http://www.datasheet4u.com/

12 Page





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