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PDF AOD210 Data sheet ( Hoja de datos )
| Número de pieza | AOD210 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOD210
30V N-Channel MOSFET
General Description
Product Summary
The AOD210 uses Trench MOSFET technology that
is uniquely optimized to provide the most efficient high
frequency switching performance. Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition, switching behavior is well
controlled with a “Schottky style” soft recovery bodydiode.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
30V
70A
< 3mΩ
< 4mΩ
Top View
TO252
DPAK
Bottom View
D
D
D
SG
GS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum
30
±20
70
55
390
23
18
68
231
150
75
2.7
1.7
-55 to 175
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
14.2
39
0.8
Max
17
47
1
Rev0 : May 2010
www.aosmd.com
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
AOD210
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
200
TA=25°C
100
TA=150°C
TA=100°C
TA=125°C
10
1 10 100 1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
160
120
80
40
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
80
60
40
20
0
0
10
1
10000
1000
100
10
TA=25°C
17
5
2
10
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note F)
175
1
0.00001
0.001
0.1
10
0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=47°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.0001
Single Pulse
PD
Ton T
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1000
Rev 0: May 2010
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOD210.PDF ] | |
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