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Teilenummer | AO4402 |
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Beschreibung | N-Channel MOSFET | |
Hersteller | Freescale | |
Logo | ||
Gesamt 6 Seiten AO4402
20V N-Channel MOSFET
General Description
The AO4402 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.
Features
VDS
ID (at VGS=4.5V)
RDS(ON) (at VGS=4.5V)
RDS(ON) (at VGS=2.5V)
20V
20A
< 5.5mΩ
< 7mΩ
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM
IAS, IAR
EAS, EAR
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
20
±12
20
16
140
57
162
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
1/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
AO4402
20V N-Channel MOSFET
+
VDC
-
Vgs
Ig
Gate Charge Test Circuit & Waveform
+
Vds
VDC
DUT -
Vgs
10V
Qgs
Qg
Qgd
Vds
Vgs
Rg
Resistive Switching Test Circuit & Waveforms
RL
Vds
DUT
+
Vdd
VDC
-
Charge
90%
10%
Vgs
Vgs
td(on) tr
ton
td(off)
tf
toff
Vds
Id
Vgs
Rg
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E=
AR
1/2
LIAR
Vds
Vgs
+
Vdd
VDC
- Id
DUT
Vgs
B VD S S
I AR
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vgs
+
Vdd
VDC
-
Isd
Vds
I F trr
dI/dt
I RM
Vdd
6/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ AO4402 Schematic.PDF ] |
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