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PDF MRFE6S8046GNR1 Data sheet ( Hoja de datos )
| Número de pieza | MRFE6S8046GNR1 | |
| Descripción | RF Power Field Effect Transistors | |
| Fabricantes | Freescale | |
| Logotipo |  |
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‘FTerecehsncicaalleDSaetamiconductor
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 864 to 894 MHz. Suitable for CDMA and multicarrier amplifier
applications.
• Typical GSM Performance: VDD = 28 Volts, IDQ = 300 mA, Pout =
35.5 Watts CW
Frequency
Gps
(dB)
hD
(%)
864 MHz
880 MHz
894 MHz
19.9 58.7
20 58.5
19.8 57.7
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 70 Watts CW Output
Power (3 dB
Ruggedness
Input
Overdrive
from
Rated
Pout),
Designed
for
Enhanced
• Typical Pout @ 1 dB Compression Point ] 47 Watts CW
•
Typical GSM EDGE Performance:
Pout = 17.8 Watts Avg.
VDD
=
28
Volts,
IDQ
=
285
mA,
Frequency
Gps
(dB)
Spectral
Spectral
Regrowth @ Regrowth @
hD 400 kHz
(%) (dBc)
600 kHz
(dBc)
EVM
(% rms)
864 MHz 19.8 43.8
61.2
70.9 2.1
880 MHz 19.9 43.6
63.4
72.5 2
894 MHz 19.8 43.1
63.7
73 2
Document Number: MRFE6S8046N
Rev. 0, 5/2009
MRFE6S8046NR1
MRFE6S8046GNR1
864 - 894 MHz, 35.5 W CW, 28 V
GSM, GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRFE6S8046NR1
CASE 1487 - 05, STYLE 1
TO - 270 WB - 4 GULL
PLASTIC
MRFE6S8046GNR1
PARTS ARE SINGLE - ENDED
Features
• Class F Output Matched for Higher Impedances and Greater Efficiency
• Designed for High Efficiency. Typical Drain Efficiency @ P1dB ] 66%
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S - Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
RFin/VGS 3
2 RFout/VDS
RFin/VGS 4
1 RFout/VDS
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +66
Vdc
Gate- Source Voltage
VGS - 6.0, +10 Vdc
Operating Voltage
VDD 32, +0 Vdc
Storage Temperature Range
Tstg - 65 to +150 °C
Case Operating Temperature
TC 150 °C
Operating Junction Temperature (1,2)
TJ 225 °C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S8046NR1 MRFE6S8046GNR1
1
Free Datasheet http://www.datasheet4u.com/
1 page  
VGS
R1
C1 C2
C5
C3
C4
MRFE6S8046GN/MRFE6S9046GN
Rev. 2
C14
C10
C6
C8
C9
C7
C11
C12
C13
VDS
VDS
Figure 3. MRFE6S8046NR1(GNR1) Reference Design Test Circuit Component Layout
RF Device Data
Freescale Semiconductor
MRFE6S8046NR1 MRFE6S8046GNR1
5
Free Datasheet http://www.datasheet4u.com/
5 Page 
RF Device Data
Freescale Semiconductor
MRFE6S8046NR1 MRFE6S8046GNR1
11
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet MRFE6S8046GNR1.PDF ] | |
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