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PDF 2SK3690-01 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3690-01 | |
| Descripción | N-CHANNEL SILICON POWER MOSFET | |
| Fabricantes | Fuji Electric | |
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2SK3690-01
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
No secondary breakdown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Outline Drawings (mm) 200406
TO-220AB
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Drain-source voltage VDS 600
VDSX
600
Continuous Drain Current
ID
4.5
Pulsed Drain Current
ID(puls]
±18
Gate-Source Voltage VGS ±30
Maximum Avalanche current
IAR
4.5
Non-Repetitive
EAS 261.1
Maximum Avalanche Energy
Repetitive
EAR 8
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode Recovery dV/dt
dV/dt
5
Max. Power Dissipation
PD
80
2.02
Operating and Storage
Tch
+150
Temperature range
Tstg -55 to +150
Unit
V
V
A
A
V
A
mJ
Remarks
VGS=-30V
Note *1
Note *2
mJ Note *3
kV/µs VDS=<600V
kV/µs Note *4
W Tc=25°C
Ta=25°C
°C
°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Note *1:Tch =< 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=1.8A,L= 148mH,
VCC=60V,RG=50Ω
EAS limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Note *4:IF=< -ID, -di/dt = 50A/µs,VCC=<BVDSS,Tch=<150°C
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Test Conditions
ID= 250µA
ID= 250µA
VGS=0V
VDS=VGS
VDS=600V VGS=0V
Tch=25°C
VDS=480V VGS=0V
VGS=±30V VDS=0V
Tch=125°C
ID=2.25A VGS=10V
ID=2.25A VDS=25V
VDS=25V
VGS=0V
f=1MH
VCC=300V
ID=2.25A
VGS=10V
RGS=10 Ω
VCC=300V
ID=4.5A
VGS=10V
IF=4.5A VGS=0V Tch=25°C
IF=4.5A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ.
600
3.0
10
1.8
2.5 5
400
60
3
18
4
30
5
15
5.5
3
1.00
0.7
3.5
Max. Units
V
5.0 V
25 µA
250 µA
100 nA
2.3 Ω
S
600 pF
90
5
27 ns
6
45
7.5
23 nC
8
4.5
1.50 V
µs
µC
Thermal characteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
1.563 °C/W
62 °C/W
www.fujielectric.co.jp/fdt/scd
1
Free Datasheet http://www.datasheet4u.com/
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| PDF Descargar | [ Datasheet 2SK3690-01.PDF ] | |
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