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PDF 2SD2659 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2659 | |
| Descripción | Silicon NPN triple diffusion planar type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Power Transistors
2SD2659
Silicon NPN triple diffusion planar type
For power switching
■ Features
• High forward current transfer ratio hFE
• Satisfactory linearity of forward current transfer ratio hFE
• TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
TC = 25°C
VCBO
VCEO
VEBO
IC
ICP
PC
80
60
6
3
6
20
2
Junction temperature
Storage temperature
Tj 150
Tstg −55 to +150
Unit
V
V
V
A
A
W
°C
°C
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
fT
IC = 10 mA, IB = 0
VCB = 80 V, IE = 0
VCE = 60 V, IB = 0
VEB = 6 V, IC = 0
VCE = 4.0 V, IC = 0.5 A
IC = 2.0 A, IB = 0.05 A
VCE = 12 V, IC = 0.2 A, f = 10 MHz
60 V
100 µA
100 µA
100 µA
500 1 500
1.2 V
50 MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
SJD00292AED
1
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SD2659.PDF ] | |
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