|
|
Teilenummer | JDV2S17S |
|
Beschreibung | VCO | |
Hersteller | Toshiba | |
Logo | ||
Gesamt 3 Seiten TOSHIBA DIODE Silicon Epitaxial Planar Type
JDV2S17S
VCO for UHF Band Radio
• High Capacitance Ratio: C1V/C4V = 2.1 (typ.)
• Low Series Resistance : rs = 0.6 Ω (typ.)
• This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
VR
Tj
Tstg
Rating
10
150
−55~150
Unit
V
°C
°C
JDV2S17S
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
VR
IR
C1V
C4V
C1V/C4V
rs
IR = 1 µA
VR = 10 V
VR = 1 V, f = 1 MHz
VR = 4 V, f = 1 MHz
⎯
VR = 1 V, f = 470 MHz
Note: Signal level when capacitance is measured: Vsig = 100 mVrms
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1K1A
Weight: 0.0011 g (typ.)
Min Typ. Max Unit
10 ⎯ ⎯ V
⎯ ⎯ 3 nA
1.77 ⎯ 2.01
pF
0.8 ⎯ 1.0
2 ⎯ 2.2 ⎯
⎯ 0.6 0.75 Ω
J
1 2004-02-09
Free Datasheet http://www.datasheet4u.com/
| ||
Seiten | Gesamt 3 Seiten | |
PDF Download | [ JDV2S17S Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
JDV2S17S | VCO | Toshiba |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |