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NOIS1SM1000S Schematic ( PDF Datasheet ) - ON Semiconductor

Teilenummer NOIS1SM1000S
Beschreibung 1M Pixel Radiation Hard CMOS Image Sensor
Hersteller ON Semiconductor
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Gesamt 30 Seiten
NOIS1SM1000S Datasheet, Funktion
NOIS1SM1000S,
NOIS1SM1000A
STAR1000 1M Pixel
Radiation Hard CMOS
Image Sensor
Features
1024 x 1024 Active Pixels
15 mm x 15 mm Pixel Size
1 inch 35 mm Optical Format
High Radiation Tolerance
High Sensitivity
Low Noise
Monochrome and Color
11 Frames per Second (fps) at Full Resolution
On-chip 10-bit Analog-to-Digital Converter (ADC)
Region of Interest (ROI) Readout
Windowed and Subsampled Readout
Rolling Shutter
On-chip Fixed Pattern Noise (FPN) Correction
Ceramic JLCC-84 Package
BK7G18 Glass with N2 Filled Cavity
400 mW Power Dissipation
These Devices are PbFree and are RoHS Compliant
http://onsemi.com
Applications
Standard market Applications
Nuclear Inspection
Space Applications
Space Science
Star Trackers
Sun Sensors
Figure 1. STAR1000 in 84Pin Ceramic
JLCC Package
JLDCC84
CASE 114AK
Description
The STAR1000 is a CMOS image sensor with 1024 by 1024 pixels on a 15 mm x 15 mm pitch. It features on-chip Fixed
Pattern Noise (FPN) correction, a programmable gain amplifier, and a 10-bit Analog-to-Digital Converter (ADC).
All circuits are designed using the radiation tolerant design techniques to allow high tolerance against Radiation effects.
Registers which contain the X- and Y- addresses of the read out pixels can be directly accessed by the external controller.
This architecture provides for flexible operation and allows different operation modes such as (multiple) windowing,
subsampling, and so on.
The STAR1000 is assembled using a BK7G18 glass lid with a Nitrogen-filled cavity which increases the temperature
operating range. The STAR1000 flight model has additional screening to space qualified standards.
ORDERING INFORMATION
Marketing Part Number
Description
NOIS1SM1000A-HHC
Mono with BK7G18 Glass, Engineering Model
NOIS1SM1000S-HHC
Mono with BK7G18 Glass, Flight Model
NOIS1SM1000A-HWC
Mono windowless, Engineering Model
NOIS1SM1000S-HWC
Mono windowless, Flight Model
NOIS1SC1000A-HHC
Color with BK7G18 Glass, Engineering Model
Status
Production
Risk Production
Engineering
Package
84 pin JLCC
case 114AK
© Semiconductor Components Industries, LLC, 2013
October, 2013 Rev. 11
1
Publication Order Number:
NOIS1SM1000A/D
Free Datasheet http://www.datasheet4u.com/






NOIS1SM1000S Datasheet, Funktion
NOIS1SM1000S, NOIS1SM1000A
TEST PROCEDURE OVERVIEW
Environmental and Endurance Tests
Electrical and electroopticalmeasurements on completion
of environmental test
The parameters to be measured on completion of
environmental tests are scheduled in Table 21. Unless
otherwise stated, the measurements shall be performed at an
environmental temperature of 22 ±3°C. Measurements of
dark current are performed at 22 ±1°C and the actual
environmental temperature must be reported with the test
results.
Electrical and electrooptical measurements at
intermediate point during endurance test
The parameters to be measured at intermediate points
during endurance test of environmental tests are scheduled
in Table 21. Unless otherwise stated, the measurements shall
be performed at an environmental temperature of 22 ±3°C.
Electrical and electroopticalmeasurements on completion
of endurance test
The parameters to be measured on completion of
endurance tests are scheduled in Table 21. Unless otherwise
stated, the measurements shall be performed at an
environmental temperature of 22 ±3°C.
Conditions for operating life test
The conditions for operating life tests shall be as specified
in Table 20 of this specification.
Electrical circuits for operating life test
Circuits for performing the operating life test are shown
in Figure 2 of this specification.
Conditions for high temperature storage test
The temperature to be applied shall be the maximum
storage temperature specified in Table 6 of this
specification.
http://onsemi.com
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NOIS1SM1000S pdf, datenblatt
NOIS1SM1000S, NOIS1SM1000A
Table 12. ELECTROOPTICAL INFORMATION
(under nominal bias conditions at nominal pixel rate with Tj = 22 ±3°C in “soft reset”, unless otherwise stated)
Characteristics
Limits
Units
Min Typ Max
Saturation voltage output
0.99 1.11 1.24
V
Linear range (within ±1%)
95 Ke-
Full well charge (Note 1)
135 Ke-
Quantum efficiency x Fill factor
(Between 450 nm and 750 nm)
30 %
Responsivity narrow band blue, at 475 nm ±20 nm
21000 25300
ADU
Responsivity narrow band green, at 526 nm ±20 nm
20500 24800
ADU
Responsivity narrow band red, at 630 nm ±20 nm
Charge to voltage conversion factor. (Note 2)
18400
23000
11.5
ADU
mV/e-
Temporal noise, at 5 MHz clock rate
0.61 0.72
mV
Temporal noise, at 2 MHz clock rate
0.77 1.02
mV
Temporal noise, at 10 MHz clock rate
0.82 1.13
mV
Local fixed pattern noise standard deviation, at 5 MHz clock rate. (Note 3)
Global fixed pattern noise standard deviation, at 5 MHz clock rate. (Note 4)
Local fixed pattern noise standard deviation, at 2 MHz clock rate. (Note 3)
Global fixed pattern noise standard deviation, at 2 MHz clock rate. (Note 4)
Local fixed pattern noise standard deviation, at 10 MHz clock rate. (Note 3)
Global fixed pattern noise standard deviation, at 10 MHz clock rate. (Note 4)
Column FPN. (Note 5)
Average dark signal
0.13
0.38
0.20
0.42
0.21
0.39
0.37
13.5
0.20
0.62
0.27
0.55
0.33
0.78
0.61
28.2
%Vsat
%Vsat
%Vsat
%Vsat
%Vsat
%Vsat
%Vsat
mV/s
Dark signal temperature dependency (temperature rise for doubling average dark current)
Local dark signal non uniformity standard deviation
Global dark signal non uniformity standard deviation
Local photo response non uniformity, standard deviation. (Note 6)
9.2
0.79
0.99
0.95
1.03
1.32
1.33
°C
%Vsat
%Vsat
%
Global photo response non uniformity, standard deviation. (Note 7)
3.30 6.09
%
MTF X direction. (Note 8)
0.26
MTF Y direction. (Note 8)
0.37
Pixel to pixel cross talk X direction. (Note 9)
17.5 %
Pixel to pixel cross talk Y direction. (Note 9)
16 %
Anti-blooming capability
X 1000
1. Full well charge and linear range are calculated from detailed electro-optical response measurements.
2. Charge to voltage conversion factor is calculated from the detailed electro-optical response measurements.
3. Percentage of full well charge, measured in complete FPA area. Local specification indicates variation of pixel values with respect to the
average of a 20 x 20 window area. The number given is the average of all 20 x 20 window FPNs.
4. Percentage of full well charge, measured in complete FPA area. Global specification indicates variation of pixel value with respect to global
average.
5. Percentage of full well charge, measured in the complete FPA area
6. Percentage of signal (black offset subtracted), measured in complete FPA area. Local specification indicates variation of pixel values with
respect to the average of a 20 x 20 window area. The number given is the average of all 20 x 20 window PRNUs.
7. Percentage of signal (black offset subtracted), measured in complete FPA area. Global specification indicates variation of pixel value with
respect to global average.
8. MTF is calculated from the detailed electro-optical response measurements.
9. Pixel to pixel optical crosstalk in percentage of charge in illuminated pixel.
http://onsemi.com
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