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PDF FGA25N120FTD Data sheet ( Hoja de datos )
| Número de pieza | FGA25N120FTD | |
| Descripción | Field Stop Trench IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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March 2013
FGA25N120FTD
1200 V, 25 A Field Stop Trench IGBT
Features
• Field Stop Trench Technology
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 25 A
• High Input Impedance
• RoHS Complaint
Applications
• Induction Heating, Microvewave Oven
General Description
Using advanced field stop trench technology, Fairchild®’s
1200V trench IGBTs offer superior conduction and switching
performances for soft switching applications. The device can
operate in parallel configuration with exceptional avalanche rug-
gedness. This device is designed for induction heating and
microwave oven.
C
GCE
TO-3P
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
Diode continuous Forward current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitiverating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2008 Fairchild Semiconductor Corporation
FGA25N120FTD Rev. C0
1
G
E
Ratings
1200
± 25
50
25
75
25
313
125
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
W
W
oC
oC
oC
Typ.
-
-
-
Max.
0.4
1.42
40
Unit
oC/W
oC/W
oC/W
www.fairchildsemi.com
1 page  
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 125oC
16
12
8
4
25A
50A
IC = 10A
0
0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
600V
9
VCC = 200V
400V
6
3
0
0 50 100 150 200
Gate Charge, Qg [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
500
tr
100
10
0
td(on)
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
TC = 25oC
TC = 125oC
20 40 60 80
Gate Resistance, RG [Ω]
100
Figure 8. Capacitance Characteristics
6000
5000
Common Emitter
Cies VGE = 0V, f = 1MHz
TC = 25oC
4000
3000
2000
Coes
1000
0
1
Cres
10
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteristics
200
100
10µs
100µs
10 1ms
10 ms
1 DC
*Notes:
0.1 1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
1
10 100 1000 3000
Collector-Emitter Voltage, VCE [V]
Figure 12. Turn-off Characteristics vs.
Gate Resistance
5500
1000
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
TC = 25oC
TC = 125oC
td(off)
100
50
0
tf
20 40 60 80
Gate Resistance, RG [Ω]
100
©2008 Fairchild Semiconductor Corporation
FGA25N120FTD Rev. C0
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGA25N120FTD.PDF ] | |
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