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Teilenummer | 2N3866 |
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Beschreibung | NPN SILICON HIGH FREQUENCY TRANSISTOR | |
Hersteller | Advanced Semiconductor | |
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Gesamt 1 Seiten 2N3866
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The ASI 2N3866 is a High
Frequency Transistor Designed for
Amplifier and Oscillator Applications.
MAXIMUM RATINGS
IC 400 mA
VCE
PDISS
TJ
TSTG
θJC
30 V
5.0 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +200 OC
35 OC/W
PACKAGE STYLE TO-39
1 = Emitter 2 = Base
3 = Collector
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCEO
IC = 5.0 mA
BVCER
IC = 5.0 mA RBE = 10 Ω
BVEBO
IC = 100 µA
ICEX
VCE = 55 V
VCE = 30 V
VBE = -1.5 V
VBE = -1.5 V
TC = 200 OC
ICEO
VCE = 28 V
IEBO
VEB = 3.5 V
hFE
VCE = 5.0 V
IC = 50 mA
IC = 360 mA
VCE(SAT)
IC = 100 mA
IB = 20 mA
MINIMUM
30
55
3.5
10
5.0
ft
VCE = 15 V
IC = 50 mA
f = 200 MHz
COB
VCB = 28 V
f = 1.0 MHz
500
GPE
VCC = 28 V
Pout = 1.0 W f = 400 MHz
ηc
10
45
NONE
TYPICAL MAXIMUM
100
500
20
100
200
1.0
3.0
UNITS
V
V
V
µA
µA
µA
---
V
MHz
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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Seiten | Gesamt 1 Seiten | |
PDF Download | [ 2N3866 Schematic.PDF ] |
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