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PDF AON6452 Data sheet ( Hoja de datos )
| Número de pieza | AON6452 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AON6452
100V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AON6452 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well
suited for PWM, load switching and general purpose
applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 7V)
100% UIS Tested
100% Rg Tested
100V
26A
< 25mΩ
< 31mΩ
Top View
DFN5X6
Bottom View
PIN1
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
100
±25
26
17
60
6.5
5.0
28
39
35
14
2
1.25
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
24
53
2.7
Max
30
64
3.5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev2: May 2012
www.aosmd.com
Page 1 of 7
Free Datasheet http://www.datasheet4u.com/
1 page  
AON6452
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 50
TA=25°C
TA=150°C
TA=100°C
TA=125°C
40
30
20
10
10
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
0
40 10000
25 50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
30 1000
20 100
TA=25°C
10 10
0
0 25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
1
0.00001 0.001
0.1
10 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=64°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
100
1000
Rev 2: May 2012
www.aosmd.com
Page 5 of 7
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AON6452.PDF ] | |
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